摘要: Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. Unlike Fe in GaN, the Fe is found to be donor-like in InN. However, the Fe-concentrations ([Fe]) can’t fully explain the drastic increase of residual electron concentration. Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the sample surface is degraded with a large number of pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is also gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN
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分类:
物理学
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凝聚态:结构、力学和热性能
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引用:
ChinaXiv:201703.00553
(或此版本
ChinaXiv:201703.00553V1)
DOI:10.12074/201703.00553V1
CSTR:32003.36.ChinaXiv.201703.00553.V1
- 推荐引用方式:
Xinqiang Wang,Shitao Liu,Dingyu Ma,Xiantong Zheng,Guang Chen,Fujun Xu,Ning Tang,Bo Shen,Peng Zhang,Xingzhong Cao,Baoyi Wang,Sen Huang,Kevin J. Chen,Shengqiang Zhou,AkihikoYoshikawa.(2017).Fe-doped InN layers grown by molecular beam epitaxy.中国科学院科技论文预发布平台.[ChinaXiv:201703.00553]
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