您当前的位置: > 详细浏览

Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors

Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors

摘要:Strain engineeringof 2D materials is capable of tuning the electrical and optical properties of the materialswithout introducing additional atoms. However, there are still great challenges in realizing strainingof 2D materials with CMOS compatibility. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. We introduce locally non-uniform strains through the cooperative deformation of materials and metal/metal oxide core/shell nanoparticles through cold laser shock. Raman and PL spectrareveal that the tensile strain of MoS2changes and the band gap decreases after laser shock. MD simulations are used to investigate the mechanism of the ultrafast straining of CVD-grown 2D materials. Field effect transistors of CVD MoS2were fabricated, and the performances before and after straining of the same devices are compared. By adjusting the strain level of MoS2, the field effect mobility can be increased from 1.9 cm2V-1s-1 to 44.1 cm2V-1s-1. This is the maximum value of MoS2FETs grown by CVDwith SiO2as dielectric. As an environment-friendly, large-scale and ultra-fast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D materials strain, which will help to promote the manufacturing of 2D nano electronic devices and optoelectronic devices.

英文摘要:Strain engineeringof 2D materials is capable of tuning the electrical and optical properties of the materialswithout introducing additional atoms. However, there are still great challenges in realizing strainingof 2D materials with CMOS compatibility. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. We introduce locally non-uniform strains through the cooperative deformation of materials and metal/metal oxide core/shell nanoparticles through cold laser shock. Raman and PL spectrareveal that the tensile strain of MoS2changes and the band gap decreases after laser shock. MD simulations are used to investigate the mechanism of the ultrafast straining of CVD-grown 2D materials. Field effect transistors of CVD MoS2were fabricated, and the performances before and after straining of the same devices are compared. By adjusting the strain level of MoS2, the field effect mobility can be increased from 1.9 cm2V-1s-1 to 44.1 cm2V-1s-1. This is the maximum value of MoS2FETs grown by CVDwith SiO2as dielectric. As an environment-friendly, large-scale and ultra-fast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D materials strain, which will help to promote the manufacturing of 2D nano electronic devices and optoelectronic devices.

版本历史

[V1] 2022-04-30 10:59:28 chinaXiv:202205.00002V1 下载全文
点击下载全文
同行评议状态
待评议
许可声明
metrics指标
  • 点击量2630
  • 下载量461
评论
分享
邀请专家评阅