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ID effects on beam dynamics in the SSRF-U storage ring

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摘要: This paper introduces the proposed Insertion Device (ID) scheme for the Shanghai Synchrotron Radiation Facility Upgrade (SSRF-U). Based on this scheme, the influences of the ID radiation on the Intra-Beam Scattering (IBS) emittance and energy spread were evaluated. Optical distortion caused by the IDs was comprehensively examined and compensated using both local and global corrections. Subsequently, a Frequency Map Analysis (FMA) method was used to identify potentially dangerous resonance lines. In addition, the dynamic aperture, energy acceptance, and Touschek lifetime were calculated after considering high-order magnetic field errors to ensure that the ID effect did not affect the operation of the storage ring.

 

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[V1] 2023-10-12 13:23:42 ChinaXiv:202310.03359V1 下载全文
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