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Heavy ion energy influence on multiple-cell upsets in small sensitive volumes: From standard to high energies

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摘要: The 28nm process has a high cost-performance ratio and has gradually become the standard for the field
of radiation-hardened devices. However, owing to the minimum physical gate length of only 35nm, the physical
area of a standard 6T SRAM unit is approximately 0.16 μm2, resulting in a significant enhancement of
multi-cell charge-sharing effects. Multiple-cell upsets (MCUs) have become the primary physical mechanism
behind single-event upsets (SEUs) in advanced nanometer node devices. The range of ionization track effects
increases with higher ion energies, and spacecraft in orbit primarily experience SEUs caused by high-energy
ions. However, ground accelerator experiments have mainly obtained low-energy ion irradiation data. Therefore,
the impact of ion energy on the SEU cross-section, charge collection mechanisms, and MCU patterns and
quantities in advanced nanometer devices remains unclear. In this study, based on the experimental platform
of the Heavy Ion Research Facility in Lanzhou (HIRFL), low- and high-energy heavy-ion beams were used
to study the SEUs of 28nm SRAM devices. The influence of ion energy on the charge collection processes
of small-sensitive-volume devices, MCU patterns, and upset cross-sections was obtained, and the applicable
range of the inverse-cosine law was clarified. The findings of this study are an important guide for the accurate
evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

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[V1] 2024-02-29 16:03:59 ChinaXiv:202402.00263V1 下载全文
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