Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic

分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》

ZHANG Zhan-Gang LIU Jie HOU Ming-Dong SUN You-Mei SU Hong GU Song GENG Chao YAO Hui-Jun LUO Jie DUAN Jing-Lai MO Dan XI Kai EN Yun-Fei

摘要：Experimental evidence is presented showing obvious azimuthal dependence of single event upsets (SEU

通过

 点击量 795  下载量 150  评论 0