摘要： This paper introduces the proposed Insertion Device (ID) scheme for the Shanghai Synchrotron Radiation Facility Upgrade (SSRF-U). Based on this scheme, the influences of the ID radiation on the Intra-Beam Scattering (IBS) emittance and energy spread were evaluated. Optical distortion caused by the IDs was comprehensively examined and compensated using both local and global corrections. Subsequently, a Frequency Map Analysis (FMA) method was used to identify potentially dangerous resonance lines. In addition, the dynamic aperture, energy acceptance, and Touschek lifetime were calculated after considering high-order magnetic field errors to ensure that the ID effect did not affect the operation of the storage ring.