分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 * 4096 pixels, each of 15 {\mu}m in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 * 99 pixels, are chosen for the experiment. The readout noise, conversion gain and energy resolutions of the individual pixels in these areas are measured from a large number (more than 25,000) of X-ray events accumulated for each of the pixels through long time exposures. The energy resolution of these pixels can reach 140 eV at 6.4 keV at room temperature and shows a significant positive correlation with the readout noise. The accurate gain can also be derived individually for each of the pixels from its X-ray spectrum obtained. Variations of the gain values are found at a level of 0.56% statistically among the 30 thousand pixels in the areas studied. With the gain of each pixel determined accurately, a precise gain correction is performed pixel by pixel in these areas, in contrast to the standardized ensemble gain used in the conventional method. In this way, we could almost completely eliminate the degradation of energy resolutions caused by gain variations among pixels. As a result, the energy resolution at room temperature can be significantly improved to 124.6 eV at 4.5 keV and 140.7 eV at 6.4 keV. This pixel-by-pixel gain correction method can be applied to all kinds of CMOS sensors, and is expected to find interesting applications in X-ray spectroscopic observations in the future.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices for optical and X-ray detection, especially in time-domain astronomy. After a series of tests of sCMOS sensors, we proposed a new dedicated high-speed, large-format X-ray detector in 2016 cooperating with Gpixel Inc. This new sCMOS sensor has a physical size of 6 cm by 6 cm, with an array of 4096 by 4096 pixels and a pixel size of 15 um. The frame rate is 20.1 fps under current condition and can be boosted to a maximum value around 100 fps. The epitaxial thickness is increased to 10 um compared to the previous sCMOS product. We show the results of its frst taped-out product in this work. The dark current of this sCMOS is lower than 10 e/pixel/s at 20C, and lower than 0.02 e/pixel/s at -30C. The Fixed Pattern Noise (FPN) and the readout noise are lower than 5 e in high-gain situation and show a small increase at low temperature. The energy resolution reaches 180.1 eV (3.1%) at 5.90 keV for single-pixel events and 212.3 eV (3.6%) for all split events. The continuous X-ray spectrum measurement shows that this sensor is able to response to X-ray photons from 500 eV to 37 keV. The excellent performance, as demonstrated from these test results, makes sCMOS sensor an ideal detector for X-ray imaging and spectroscopic application.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 * 4096 pixels, each of 15 {\mu}m in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 * 99 pixels, are chosen for the experiment. The readout noise, conversion gain and energy resolutions of the individual pixels in these areas are measured from a large number (more than 25,000) of X-ray events accumulated for each of the pixels through long time exposures. The energy resolution of these pixels can reach 140 eV at 6.4 keV at room temperature and shows a significant positive correlation with the readout noise. The accurate gain can also be derived individually for each of the pixels from its X-ray spectrum obtained. Variations of the gain values are found at a level of 0.56% statistically among the 30 thousand pixels in the areas studied. With the gain of each pixel determined accurately, a precise gain correction is performed pixel by pixel in these areas, in contrast to the standardized ensemble gain used in the conventional method. In this way, we could almost completely eliminate the degradation of energy resolutions caused by gain variations among pixels. As a result, the energy resolution at room temperature can be significantly improved to 124.6 eV at 4.5 keV and 140.7 eV at 6.4 keV. This pixel-by-pixel gain correction method can be applied to all kinds of CMOS sensors, and is expected to find interesting applications in X-ray spectroscopic observations in the future.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices for optical and X-ray detection, especially in time-domain astronomy. After a series of tests of sCMOS sensors, we proposed a new dedicated high-speed, large-format X-ray detector in 2016 cooperating with Gpixel Inc. This new sCMOS sensor has a physical size of 6 cm by 6 cm, with an array of 4096 by 4096 pixels and a pixel size of 15 um. The frame rate is 20.1 fps under current condition and can be boosted to a maximum value around 100 fps. The epitaxial thickness is increased to 10 um compared to the previous sCMOS product. We show the results of its frst taped-out product in this work. The dark current of this sCMOS is lower than 10 e/pixel/s at 20C, and lower than 0.02 e/pixel/s at -30C. The Fixed Pattern Noise (FPN) and the readout noise are lower than 5 e in high-gain situation and show a small increase at low temperature. The energy resolution reaches 180.1 eV (3.1%) at 5.90 keV for single-pixel events and 212.3 eV (3.6%) for all split events. The continuous X-ray spectrum measurement shows that this sensor is able to response to X-ray photons from 500 eV to 37 keV. The excellent performance, as demonstrated from these test results, makes sCMOS sensor an ideal detector for X-ray imaging and spectroscopic application.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low readout noise. We tested the basic performance of a backside-illuminated (BSI) sCMOS sensor, which has a small pixel size of 6.5 um * 6.5 um. At a temperature of -20C, The readout noise is 1.6 e, the dark current is 0.5 e/pixel/s, and the energy resolution reaches 204.6 eV for single-pixel events. The effect of depletion depth on the sensor's performance was also examined, using three versions of the sensors with different deletion depths. We found that the sensor with a deeper depletion region can achieve a better energy resolution for events of all types of pixel splitting patterns, and has a higher efficiency in collecting photoelectrons produced by X-ray photons. We further study the effect of depletion depth on charge diffusion with a center-of-gravity (CG) model. Based on this work, a highly depleted sCMOS is recommended for applications of soft X-ray spectroscop.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low readout noise. We tested the basic performance of a backside-illuminated (BSI) sCMOS sensor, which has a small pixel size of 6.5 um * 6.5 um. At a temperature of -20C, The readout noise is 1.6 e, the dark current is 0.5 e/pixel/s, and the energy resolution reaches 204.6 eV for single-pixel events. The effect of depletion depth on the sensor's performance was also examined, using three versions of the sensors with different deletion depths. We found that the sensor with a deeper depletion region can achieve a better energy resolution for events of all types of pixel splitting patterns, and has a higher efficiency in collecting photoelectrons produced by X-ray photons. We further study the effect of depletion depth on charge diffusion with a center-of-gravity (CG) model. Based on this work, a highly depleted sCMOS is recommended for applications of soft X-ray spectroscop.
点击量
待评议
点击量
下载量
评论
