分类: 核科学技术 >> 核探测技术与核电子学 提交时间: 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要: Two GaN p-(i)-n diodes were designed and fabricated, and their electrical performances with 63Ni and 147Pm plate sources were compared. The results showed that the diodes with 147Pm had better electrical performances, with a short-circuit current (Isc) of 59 nA, an open-circuit voltage (Voc) of 1.4 V, and a maximum power (Pmax) of 49.4 nw. The ways to improve the electrical performances are discussed, including appropriate increase of the i-GaN thickness.