分类： 材料科学 >> 纳米科学和纳米技术 提交时间： 2016-12-23
摘要： A novel double gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of normal gate, was proposed and fabricated for the first time to compare the dynamic characteristics of AlGaN/GaN HEMTs with source field plate(SFP) and gate field plate(GFP). During the dynamic characterization, the device was configured in two operation modes, one is the source-field-plate mode (SFP-mode) with the top gate biased at 0V, another is the gate-field-plate mode (GFP-mode) with applying the gate pulse signal on the top gate at the same time. Compared to an AlGaN/GaN HEMT without field plates, both GFP and SFP much improve the dynamic performances. Compared to SFP, the GFP shows better dynamic performances with a ~34% reduction of switch-on delay time and ~6% reduction of dynamic on-resistance. By study of the dynamic characteristics with applying negative voltage on the top gate during off-state, the mechanism differences between GFP and SFP are discussed in detail.
分类： 材料科学 >> 纳米科学和纳米技术 提交时间： 2016-12-23
摘要： AlGaN/GaN HEMT适合应用于高压大功率器件，但在高电压动态使用时，存在导通电阻增加的现象[1,2]。目前可以有效降低动态导通电阻的方法有：场板结构[3,4]和AlN介质层[5]等。本论文采用叠层双栅结构AlGaN/GaN HEMT器件，该器件在栅电极之上新增加了一个通过介质层（Si3N4）与栅电极相隔离并可以单独加信号控制的顶栅。在动态下工作时,顶栅电极的脉冲输入信号与栅电极的脉冲输入信号同步。在器件关态时，顶栅电极加0V偏置；在器件开态时，顶栅电极加正电压。顶栅在器件开态下所加正电压越大，器件的动态导通电阻越小。
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