Subjects: Physics >> Nuclear Physics submitted time 2023-09-13
Ma, Pufang
Wang, Jiarong
Zhang, Zixiao
Meng, Tianming
Xia, Zihan
Ren, Baihui
Wei,Long
Yao, Ke
Xiao, Jun
Zou, Yaming
Tu, Bingsheng
Wei, baoren
Abstract： The total absolute cross sections of single- and double-electron capture (SEC and DEC) in the collisions of He2+ with He and Ne8+ with O2, N2, and CH4 were studied in the energy ranges 3.5 to 50 keV/u and 2.8 to 40 keV/u, respectively. Through a deep analysis of the experimental systematic uncertainties in the measurement procedure and data evaluation, the error in the experimental results of the SEC cross sections is less than 9%. Within the uncertainties, the present results of the He2+ -He collision show good consistency with previous measurements, validating the experimental system and paving the way for precise measurements of EC cross sections for a variety of ions and neutral gases. The present measurements allow for a test of EC theory and provide crucial EC cross section data for the establishment of plasma models in fusion research and astrophysical X-ray studies.
Peer Review Status:
Awaiting Review
Subjects: Nuclear Science and Technology >> Nuclear Science and Technology submitted time 2025-07-04
Jiarong wang
Bingsheng tu
Jifei Wu
Tianhang Zhang
Jialin Liu
Jiateng Peng
Jiawei Wang
Yang Shen
Baoren Wei
Yaming Zou
Abstract： Accurate atomic mass data hold significant application value in various research fields, in which Penning Trap mass spectrometry is considered the most precise experimental method. A cryogenic detection system is a key component for reading out the image charge of charged particles in Penning traps using the Fourier transform ion cyclotron resonance technique. In this paper, we present the development and characteristics of this detection system, which includes a superconducting resonator and cryogenic low-noise amplifiers. The resonator consists of delicately woven thin NbTi wires configured into a multilayer helical coils, offering a quality factor of 98004 at around 1 MHz. Low-noise amplifiers are developed based on GaAs field-effect transistors, exhibiting amplification factors greater than 27 dB with a power consumption of approximately 6 mW in the frequency range of 0.1 to 10 MHz. The lowest input voltage noise is 0.8 nV/ √ Hz at 1 MHz. The fabrication process, operation, and measurements are elucidated in detail.
Peer Review Status:Awaiting Review
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