分类: 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间: 2017-04-06
摘要: The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphi
分类: 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间: 2017-04-06
摘要: The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processi
分类: 材料科学 >> 纳米科学和纳米技术 提交时间: 2017-03-30
摘要: Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operatio
分类: 材料科学 >> 材料科学(综合) 提交时间: 2017-03-30
摘要: The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processi
分类: 材料科学 >> 纳米科学和纳米技术 提交时间: 2017-03-30
摘要: Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operatio
分类: 材料科学 >> 材料科学(综合) 提交时间: 2017-03-30
摘要: The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processi
分类: 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间: 2017-03-29
摘要: An indiumezinc-oxide (IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high electron mobility of w14 cm2 V 1 s 1 and a low subthreshold swing of w80 mV/decade. The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface. Due to the dynamic modulation of the transient protons flux within the nanogranular SiO2 films, the channel current would be modified dynamically. Short-term synaptic plasticities, such as short-term potentiation and short- term depression, were mimicked on the proposed IZO synaptic transistor. The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices.