Towards intrinsic phonon transport in single-layer MoS2 后印本

作者： Peng, B [Peng, Bo][ 1,2 ] ¹ Zhang, H [Zhang, Hao][ 1,2 ] ¹ Shao, HZ [Shao, Hezhu][ 3 ] ¹ Xu, YF [Xu, Yuanfeng][ 1,2 ] ¹ Zhang, XC [Zhang, Xiangchao][ 1,2 ] ¹ Zhu, HY [Zhu, Heyuan][ 1,2 ] ¹
提交时间：2017-05-02 12:34:38

摘要: The intrinsic lattice thermal conductivity of MoS2 is an important aspect in the design of MoS2-based nanoelectronic devices. We investigate the lattice dynamics properties of MoS2 by first-principle calculations. The intrinsic thermal conductivity of sin

TRANSITION-METAL DICHALCOGENIDES LATTICE THERMAL-CONDUCTIVITY MONOLAYER MOS2 RAMAN GRAPHENE ANHARMONICITY SCATTERING GRAPHITE ROADMAP PLANE

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引用： ChinaXiv:201705.00280 (或此版本 ChinaXiv:201705.00280V1)
DOI:10.12074/201705.00280V1
CSTR:32003.36.ChinaXiv.201705.00280.V1
科创链TXID： 4ccd7a84-980b-40e5-96a1-a51bf13494e7
推荐引用方式： Peng, B [Peng, Bo][ 1,2 ],Zhang, H [Zhang, Hao][ 1,2 ],Shao, HZ [Shao, Hezhu][ 3 ],Xu, YF [Xu, Yuanfeng][ 1,2 ],Zhang, XC [Zhang, Xiangchao][ 1,2 ],Zhu, HY [Zhu, Heyuan][ 1,2 ].Towards intrinsic phonon transport in single-layer MoS2.中国科学院科技论文预发布平台.[ChinaXiv:201705.00280V1] (点此复制)

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2017-05-02 12:34:38

ChinaXiv:201705.00280V1

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