Synaptic devices based on purely electronic memristors postprint

Author: Pan, RB [Pan, Ruobing][ 1,2 ] ¹ Li, J [Li, Jun][ 1 ] ¹ Zhuge, F [Zhuge, Fei][ 1 ] ¹ Zhu, LQ [Zhu, Liqiang][ 1 ] ¹ Liang, LY [Liang, Lingyan][ 1 ] ¹ Zhang, HL [Zhang, Hongliang][ 1 ] ¹ Gao, JH [Gao, Junhua][ 1 ] ¹ Cao, HT [Cao, Hongtao][ 1 ] ¹ Fu, B [Fu, Bing][ 1 ] ¹ Li, K [Li, Kang][ 1 ] ¹
Submit Time:2017-05-02 12:34:41

Abstract: Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/Z

NEUROMORPHIC COMPUTATION ZNO SYNAPSES SYSTEMS MEMORY PLASTICITY ULTRAFAST CELL

Subject:
Cite as: ChinaXiv:201705.00498 (or this version ChinaXiv:201705.00498V1)
DOI:10.12074/201705.00498V1
CSTR:32003.36.ChinaXiv.201705.00498.V1
TXID： d855e0ea-35ab-47fc-88c1-2564f0db8129
Recommended references： Pan, RB [Pan, Ruobing][ 1,2 ],Li, J [Li, Jun][ 1 ],Zhuge, F [Zhuge, Fei][ 1 ],Zhu, LQ [Zhu, Liqiang][ 1 ],Liang, LY [Liang, Lingyan][ 1 ],Zhang, HL [Zhang, Hongliang][ 1 ],Gao, JH [Gao, Junhua][ 1 ],Cao, HT [Cao, Hongtao][ 1 ],Fu, B [Fu, Bing][ 1 ],Li, K [Li, Kang][ 1 ].Synaptic devices based on purely electronic memristors.中国科学院科技论文预发布平台.[ChinaXiv:201705.00498V1] (Click&Copy)

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