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Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity 后印本

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摘要: Indium-zinc-oxide [IZO]-based electric double layer [EDL] transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the self-assembled IZO channel t

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[V1] 2017-05-02 12:34:39 ChinaXiv:201705.00314V1 下载全文
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