Low-noise large-bandwidth high-gain transimpedance amplifier for cryogenic STM at 77 K

Abstract: In this work, we design and fabricate the transimpedance Amplifier (TIA) following the design mentioned in Ref. 1 . In the TIA, the preamplifier (Pre-Amp) is made of a junction field effect transistor (JFET) that can work at 77 K. The post-amplifier (Post-Amp) is made of an operational amplifier. Cascade Pre-Amp and Post-Amp to form the inverting-amplifier. With a 1.13 Gohm feedback network, the gain of TIA is 1.13 Gohm and its bandwidth is about 97 kHz. The equivalent input noise voltage power spectral density of TIA is not more than 9 (nV)²/Hz at 10 kHz and 4 (nV)²/Hz at 50kHz, and its equivalent input noise current power spectral density is about 26 (fA)²/Hz at 10 kHz and 240 (fA)²/Hz at 50 kHz. The measured transport performances and noise performances of TIA are consistent with the simulations and calculations. As an example, the realization of TIA in this work verifies the design method and analytical calculations for the low-noise large-bandwidth high-gain TIA proposed in Ref. 1,2 . And, the TIA in this work is perfect for the cryogenic STM working at liquid nitrogen temperature.