Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes 后印本

作者： Liu, YH [Liu, Yanghui][ 1,2 ] ¹ Wan, X [Wan, Xiang][ 1,2 ] ¹ Zhu, LQ [Zhu, Li Qiang][ 1,2 ] ¹ Shi, Y [Shi, Yi][ 1,2 ] ¹ Wan, Q [Wan, Qing][ 1,2 ] ¹
提交时间：2017-05-02 12:34:40

摘要: Laterally coupled indium-zinc-oxide electric-double-layer [EDL] transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-curren

Lateral coupling 爀lectric-double-layer 爐hin-film爐ransistors

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引用： ChinaXiv:201705.00419 (或此版本 ChinaXiv:201705.00419V1)
DOI:10.12074/201705.00419V1
CSTR:32003.36.ChinaXiv.201705.00419.V1
科创链TXID： 8ce75a2f-8870-4195-9290-21e745354e98
推荐引用方式： Liu, YH [Liu, Yanghui][ 1,2 ],Wan, X [Wan, Xiang][ 1,2 ],Zhu, LQ [Zhu, Li Qiang][ 1,2 ],Shi, Y [Shi, Yi][ 1,2 ],Wan, Q [Wan, Qing][ 1,2 ].Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes.中国科学院科技论文预发布平台.[ChinaXiv:201705.00419V1] (点此复制)

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2017-05-02 12:34:40

ChinaXiv:201705.00419V1

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